|
|
|
|
|
|
|
|
|
15.06.26 - 12:27
|
Corporate News: ROHM Co., Ltd. (EQS)
|
|
|
ROHM bringt ein neues Gehäuse mit Kühlung auf der Oberseite für SiC-MOSFETs auf den Markt, das eine hohe Wärmeableitung mit Hochspannungsfähigkeit verbindet...
|
|
|
13.06.26 - 03:06
|
PCIM 2026: Why Western carmakers cannot have ′China-free′ SiC at subsidized prices (Digitimes)
|
|
|
During a panel discussion between executives and research experts from Bosch, Infineon, Rohm Semiconductor, Nexperia, Wolfspeed, and Omdia at PCIM Europe 2026, one reality was made clear: frictionless, globalized chip manufacturing is ending. While the conversation reflected industry enthusiasm for new applications such as AI servers and industrial motor drives, it was tempered by macroeconomic realities of international trade protectionism, regional resilience mandates, and aggressive tariffs....
|
|
|
12.06.26 - 07:06
|
PCIM 2026: Accepting local component deficits for system-level benefits (Digitimes)
|
|
|
In power electronics engineering, Silicon Carbide (SiC) companies are competing to achieve the absolute lowest thermal resistance (Rth), with the mindset that lower heat signature equates a superior system. However, at PCIM Europe 2026, a collaborative project between Rohm Semiconductor, Schweizer Electronic, and eMoveUs GmbH exposed a revolutionary counter-intuitive shift in design philosophy: willingly accepting a localized thermal performance deficit to ultimately achieve dominant system-level advantages....
|
|
|
|
|
|
|
|
|
|
|
|
|
08.06.26 - 10:24
|
AIXTRON gewinnt japanische ROHM für eigene Galliumnitrid-Produktion (BondGuide)
|
|
|
AIXTRON liefert seine G10-GaN-Plattform an ROHM. Der Halbleiterhersteller baut damit die eigene GaN-Produktion in Japan aus. Die AIXTRON SE hat eine strategische Produktionspartnerschaft mit dem japanischen Halbleiterkonzern ROHM Semiconductor bekanntgegeben. ROHM werde die G10-GaN-Plattform von AIXTRON nutzen, um am Standort Hamamatsu eine eigene Produktion von GaN-Epitaxiewafern aufzubauen (GaN = Galliumnitrid). Zum Einsatz kommt das System […]...
|
|
|
|
|
|
|
|
|
08.06.26 - 08:33
|
Media News: AIXTRON SE (EQS)
|
|
|
ROHM Semiconductor setzt beim Ausbau der eigenen Produktion von GaN-Leistungsbauelementen auf AIXTRONs G10-GaN-Plattform...
|
|
|
03.06.26 - 22:03
|
ROHM′s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance (GlobeNewswire EN)
|
|
|
Santa Clara, CA and Kyoto, Japan, June 03, 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that its 750 V SiC MOSFET has been adopted in a BBU (Battery Backup Unit) for AI server power supplies. With the rise of generative AI, AI server power systems are shifting to higher voltages and rapidly transitioning to HVDC (high-voltage direct current) architectures. In this environment, ROHM's device was selected as a SiC power device that supports next-generation power supply systems....
|
|
|
|
|
26.05.26 - 18:54
|
ROHM at PCIM Europe 2026: Advancing SiC Power Technology for E-Mobility and Industry (GlobeNewswire EN)
|
|
|
Santa Clara, CA and Willich/Nuremberg, Germany, May 26, 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced it will exhibit at PCIM Expo & Conference 2026, the leading international event for power electronics, intelligent motion, renewable energy and energy management – taking place June 9 to 11, 2026, in Nuremberg, Germany. ...
|
|
|
21.05.26 - 22:33
|
ROHM Launches ESD Protection Diodes for High-Speed Interfaces Exceeding 10 Gbps (GlobeNewswire EN)
|
|
|
Santa Clara, CA and Kyoto, Japan, May 21, 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced it has developed new Electro-Static Discharge (ESD) protection diodes – the RESDxVx series – that achieve both industry-leading low dynamic resistance (Rdyn) and ultra-low capacitance. This makes them suitable for a wide range of high-speed data communication applications....
|
|
Börsentreff auf Facebook |
Börsentreff auf X |
Börsentreff auf Instagram
